philips semiconductors product specification rectifier diodes pbyr325ctd series schottky barrier features symbol quick reference data ? low forward volt drop ? fast switching v r = 20 v/ 25 v ? reverse surge capability ? high thermal cycling performance i o(av) = 3 a ? low thermal resistance v f 0.4 v general description pinning sot428 dual schottky rectifier diodes pin description intended for use as output rectifiers in low voltage, high frequency 1 anode 1 switched mode power supplies. 2 cathode 1 the pbyr325ctd series is supplied in the sot428 surface 3 anode 2 mounting package. tab cathode limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol parameter conditions min. max. unit pbyr3 20ctd 25ctd v rrm peak repetitive reverse - 20 25 v voltage v rwm working peak reverse - 20 25 v voltage v r continuous reverse voltage t mb 125 ?c - 20 25 v i o(av) average rectified output square wave; d = 0.5; t mb 144 ?c - 3 a current (both diodes conducting) i frm repetitive peak forward square wave; d = 0.5; t mb 144 ?c - 3 a current per diode i fsm non-repetitive peak forward t = 10 ms - 55 a current per diode t = 8.3 ms - 60 a sinusoidal; t j = 125 ?c prior to surge; with reapplied v rrm(max) i rrm peak repetitive reverse pulse width and repetition rate - 1 a surge current per diode limited by t j max t j operating junction - 150 ?c temperature t stg storage temperature - 65 175 ?c k a1 a2 13 2 1 2 3 tab 1 it is not possible to make connection to pin 2 of the sot428 package february 1998 1 rev 1.000
philips semiconductors product specification rectifier diodes pbyr325ctd series schottky barrier thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance junction per diode - - 5 k/w to mounting base both diodes - - 4 k/w r th j-a thermal resistance junction pcb mounted, minimum footprint, fr4 - 50 - k/w to ambient board electrical characteristics all characteristics are per diode at t j = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v f forward voltage i f = 1.5 a; t j = 125?c - 0.34 0.4 v i f = 3 a; t j = 125?c - 0.39 0.5 v i f = 3 a - 0.47 0.6 v i r reverse current v r = v rwm - 0.05 2 ma v r = v rwm ; t j = 100?c - 4 8 ma c d junction capacitance v r = 5 v; f = 1 mhz, t j = 25?c to 125?c - 117 - pf february 1998 2 rev 1.000
philips semiconductors product specification rectifier diodes pbyr325ctd series schottky barrier fig.1. maximum forward dissipation per diode p f = f(i f(av) ); square current waveform where i f(av) =i f(rms) x ? d. fig.2. maximum forward dissipation per diode p f = f(i f(av) ); sinusoidal current waveform where a = form factor = i f(rms) / i f(av) . fig.3. typical and maximum forward characteristic per diode i f = f(v f ); parameter t j fig.4. typical reverse leakage current per diode; i r = f(v r ); parameter t j fig.5. typical junction capacitance per diode; c d = f(v r ); f = 1 mhz; t j = 25?c to 125 ?c. fig.6. transient thermal impedance per diode; z th j-mb = f(t p ). 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 0.5 0.2 0.1 pbyr325ctd rs = 0.067 ohms vo = 0.3 v average forward current, if(av) (a) forward dissipation, pf (w) t i d = t p t p t t d = 1.0 tmb(max) / c 150 149 148 147 146 145 0 5 10 15 20 25 1ua 10ua 100ua 1ma 10ma 100ma pbyr325ctd reverse voltage, vr (v) reverse current, ir (a) tj = 25 c 50 c 75 c 100 c 125 c 150 c 0 0.5 1 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 a = 1.57 1.9 2.2 2.8 4 pbyr325ctd rs = 0.067 ohms vo = 0.3 v average forward current, if(av) (a) forward dissipation, pf (w) tmb(max) / c 150 149 148 147 146 1 10 100 10 100 1000 pbyr325ctd reverse voltage, vr (v) junction capacitance, cd (pf) 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 pbyr325ctd forward voltage, vr (v) forward current, if (a) tj = 25 c tj = 125 c max typ 0.001 0.01 0.1 1 10 pbyr325ctd pulse width, tp (s) transient thermal impedance, zth j-mb (k/w) d = t p t p t t p t d 1us 10us 100us 1ms 10ms 100ms 1s 10s february 1998 3 rev 1.000
philips semiconductors product specification rectifier diodes pbyr325ctd series schottky barrier mechanical data dimensions in mm : net mass: 1.4 g fig.7. sot428 : centre pin connected to mounting base. mounting instructions dimensions in mm fig.8. sot428 : soldering pattern for surface mounting . notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. epoxy meets ul94 v0 at 1/8". 6.22 max 2.38 max 0.93 max 6.73 max 0.3 10.4 max 0.5 0.8 max (x2) 2.285 (x2) 0.5 seating plane 1.1 0.5 min 5.4 4 min 4.6 1 2 3 tab 7.0 7.0 2.15 2.5 4.57 1.5 february 1998 4 rev 1.000
philips semiconductors product specification rectifier diodes pbyr325ctd series schottky barrier definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1998 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. february 1998 5 rev 1.000
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